Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 350-355

  Eremin, V ^a   Verbitskaya, E ^a   Li, Z ^b   Sidorov, A ^c   Fretwurst, E ^d   Lindstrom, G ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c Russian Institute of Material Science and Technology   (Russian Federation)

^d UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; IRRADIATION; LEAKAGE CURRENTS; NEUTRONS; SEMICONDUCTOR JUNCTIONS; SILICON; STABILIZATION;

SCANNING TRANSIENT CURRENT TECHNIQUE; SILICON DETECTORS; SPACE CHARGE SIGN INVERSION;

RADIATION DETECTORS;

EID: 0031121261     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01244-2     Document Type: Article

References (4)

1. E. Fretwurst et al., Nucl. Instr. and Meth. A 326 (1993) 357.
2. Z. Li et al., IEEE Trans. Nucl. Sci. NS-42 (1995) 219.
3. V. Eremin et al., Nucl. Instr. and Meth. A 372 (1996) 388.
4. V. Eremin and Z. Li, Nucl. Instr. and Meth. A 383 (1996) 528.