Trapping of electrons and holes in p-type silicon irradiated with neutrons

IEEE Nuclear Science Symposium Conference Record

Volumn 1, Issue , 2006, Pages 139-142

  Cindro, Vladimir ^a   Kramberger, Gregor ^a   Lozano, Manuel ^c   Mandić, Igor ^a   Mikuž, Marko ^a,b   Pellegrini, Giulio ^c   Pulko, Jožef ^a   Ullan, Miguel ^c   Zavrtanik, Marko ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON IRRADIATION; HOLE CONCENTRATION; NEUTRONS; SEMICONDUCTING SILICON;

CZOCHRALSKI P-TYPE MATERIALS; DRIFTING ELECTRONS; TRAPPING TIMES;

ELECTRON TRAPS;

EID: 38649141828     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2006.356125     Document Type: Conference Paper

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