Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

Nanotechnology

Volumn 22, Issue 46, 2011, Pages

  Yoon, Changjoon ^a   Moon, Taeho ^a   Lee, Myeongwon ^a   Cho, Gyoujin ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Sunchon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING CYCLES; ELECTRICAL CHARACTERISTIC; FLEXIBLE PLASTICS; HIGH MOBILITY; MESFETS; SQUARE WAVE SIGNALS; STRAIN CONDITIONS; SUBTHRESHOLD SWING; TOPDOWN; VOLTAGE GAIN;

ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM ARSENIDE; MESFET DEVICES; NANOWIRES; SEMICONDUCTING GALLIUM;

LOGIC GATES;

EID: 80155147359     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/46/465202     Document Type: Article

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