Low-frequency electronic noise in graphene transistors: Comparison with carbon nanotubes

International Journal of High Speed Electronics and Systems

Volumn 20, Issue 1, 2011, Pages 161-170

  Liu, Guanxiong ^a   Stillman, William ^b   Rumyantsev, Sergey ^b,c   Shur, Michael ^b   Balandin, Alexander A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

1 f noise; carbon nanotubes; graphene; graphene transistors; low frequency noise

Indexed keywords

1/F NOISE; BACK-GATE; CARBON NANOTUBE DEVICES; DENSITY DEPENDENCE; ELECTRONIC NOISE; EXPERIMENTAL INVESTIGATIONS; GATE BIAS; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; HOOGE PARAMETERS; LOW FLICKER NOISE; LOW FREQUENCY; LOW-FREQUENCY NOISE; NOISE PERFORMANCE; NOISE SOURCE; NORMALIZED NOISE; SENSOR APPLICATIONS; TOP-GATE;

CARBON NANOTUBES; EQUIPMENT; SPECTRAL DENSITY; THERMAL NOISE; TRANSISTORS;

GRAPHENE;

EID: 79955408418     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156411006490     Document Type: Conference Paper

References (25)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos and et al, Science 306, 666 (2004);
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva and et al, Nature 438, 197 (2005).
3. Y. B. Zhang, Y. W. Tan, H. L. Stormer and P. Kim, Nature 438, 201 (2005);
4. Y. W. Tan, Y. B. Zhang, H. L. Stormer and P. Kim, Eur. Phys. J. Special Topics 148, 15 (2007).
5. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak and et al, Phys. Rev. Lett. 100, 016602 (2008).
6. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao and et al, Nano Lett. 8, 902 (2008).
7. S. Ghosh, I. Calizo, D. Teweldebrhan, E. P. Pokatilov, D. L. Nika, A. A. Balandin and et al, Appl. Phys. Lett. 92, 151911 (2008).
8. Y. M. Lin and P. Avouris, Nano Lett. 8, 2119 (2008).
9. Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin, S. Rumyantsev, M. Shur and D. Yan, IEEE Electron Device Lett. 30, 288 (2009).
10. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim and K. Shepard, Nature Nanotechnology 3, 654 (2008).
11. I. Calizo, F. Miao, W. Bao, C. N. Lau and A. A. Balandin, Appl. Phys. Lett. 91, 071913 (2007);
12. I. Calizo, A. A. Balandin, W. Bao, F. Miao and C. N. Lau, Nano Lett. 7, 2645 (2007).
13. I. Calizo, W. Bao, F. Miao, C. N. Lau and A. A. Balandin, Appl. Phys. Lett. 91, 201904 (2007).
14. D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009).
15. A. A. Balandin, Noise and Fluctuation Control in Electronic Devices (American Scientific Publishers, Los Angeles, 2002).
16. J. M. Peransin, P. Vignaud, D. Rigaud and L. K. Vandamme, IEEE Trans. Electron Devices 37, 2250 (1990).
17. A. A. Balandin, Electron Lett. 36, 912 (2000).
18. V. Mitin and C. van Vliet, Phys. Rev. B 41, 5332 (1990).
19. A. Svizhenko, S. Bandyopadhyay and M. A. Stroscio, J. Phys.: Condensed Matter 11, 3697 (1999).
20. A. L. McWhorter, Semiconductor Surface Physics (University of Pennsylvania Press, Philadelphia, 1957).
21. A. Vijayaraghavan, S. Kar, S. Rumyantsev, A. Khanna, C. Soldano, N. Pala and et al, J. Appl. Phys. 100, 024315 (2006).
22. P. G. Collins, M. S. Fuhrer and A. Zettl, App. Phys. Lett. 76, 894 (2000).
23. S. K. Kim, Y. Xuan, P. D. Ye, S. Mohammadi, J. H. Back and M. Shim, App. Phys. Lett. 90, 163108 (2007).
24. S. Russo, M. F. Craciun, M. Yamamoto, A. F. Morpurgo and S. Tarucha, arXiv:0901.0485v1 (2009).
25. B. Q. Wei, R. Vajtai and P. M. Ajayan, App. Phys. Lett. 79, 1172 (2001).