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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

(5) Huang, S a Semichaevsky, A V b Webster, L a Johnson, H T b Goldman, R S a

a UNIVERSITY OF MICHIGAN (United States)

b University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROGRAPHS; CROSS-SECTIONAL SCANNING; EXTERNAL QUANTUM EFFICIENCY; FINITE-ELEMENT; GROWTH DIRECTIONS; INAS/GAAS; INTERMEDIATE BANDS; WETTING LAYER;

ENERGY GAP; FINITE ELEMENT METHOD; SEMICONDUCTOR QUANTUM DOTS; SIZE DISTRIBUTION;

WETTING;

EID: 80054967632 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3631785 Document Type: Article

Times cited : (19)

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