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Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots

(6) Dasika, V D a Goldman, R S a Song, J D b Choi, W J b Cho, N K b Lee, J I b

a UNIVERSITY OF MICHIGAN (United States)

b Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COMPOSITION GRADIENT; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; INAS/GAAS QUANTUM DOTS; MINIMAL EFFECTS; NANO-METER-SCALE; QUANTUM DOTS; ROOM TEMPERATURE; SCANNING TUNNELING SPECTROSCOPY; TOP SURFACE; WETTING LAYER;

ELECTRONIC STATES; ENERGY GAP; INDIUM; SCANNING; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; WIND TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67650754338 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3158560 Document Type: Article

Times cited : (10)

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