Combined effect of the target composition and deposition temperature on the properties of ZnO:Ga transparent conductive oxide films in pulsed dc magnetron sputtering

Semiconductor Science and Technology

Volumn 26, Issue 11, 2011, Pages

  Lee, Sanghun ^a   Cheon, Dongkeun ^a   Kim, Won Jeong ^a   Ahn, Kyung Jun ^b   Lee, Woong ^a  

^a Changwon National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; CRYSTALLINE QUALITY; CRYSTALLINITIES; DEPOSITION TEMPERATURES; DIFFRACTION PEAKS; DOPING EFFICIENCY; ELECTRICAL RESISTIVITY; GA-DOPED ZNO; GLASS SUBSTRATES; GROWTH PROMOTERS; INTERMEDIATE TEMPERATURES; OXIDE PHASIS; PULSED DC MAGNETRON SPUTTERING; TARGET COMPOSITION; TRANSPARENT CONDUCTIVE OXIDE FILMS; ZNO; ZNO CERAMIC;

CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; GALLIUM; GALLIUM ALLOYS; MAGNETRON SPUTTERING; SEMICONDUCTOR DOPING; SUBSTRATES; ZINC OXIDE;

OXIDE FILMS;

EID: 80054900453     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/11/115007     Document Type: Article

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