Achieving high mobility ZnO: Al at very high growth rates by dc filtered cathodic arc deposition

Journal of Physics D: Applied Physics

Volumn 44, Issue 23, 2011, Pages

  Mendelsberg, R J ^a   Lim, S H N ^a   Zhu, Y K ^b   Wallig, J ^a   Milliron, D J ^a   Anders, A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; CATHODIC ARC; CATHODIC ARC DEPOSITION; FILM SURFACES; GROWING SURFACES; HIGH GROWTH RATE; HIGH MOBILITY; HIGH QUALITY CRYSTALS; HIGHLY-IONIZED; ION FLUXES; LOW COSTS; NEUTRAL ATOMS; RATE INCREASE; SPUTTER SOURCES; SURFACE TEMPERATURES; TRANSPARENT CONDUCTING OXIDE; ZNO;

CRYSTAL GROWTH; ELECTRON MOBILITY; GROWTH RATE; PROTECTIVE COATINGS; ZINC OXIDE;

FILM GROWTH;

EID: 79957748341     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/23/232003     Document Type: Article

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