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Volumn 90, Issue 2, 1997, Pages 143-146
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Schottky diodes fabricated with langmuir-blodgett films of C60-dopedpoly(3-alkylthiophene)s
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Author keywords
Fullerenes; Polythiophene and derivatives; Semiconductors; Thin films
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Indexed keywords
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
FULLERENES;
LANGMUIR BLODGETT FILMS;
SEMICONDUCTOR DOPING;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
POLYTHIOPHENE AND DERIVATIVES;
VERTICAL DIPPING METHOD;
SCHOTTKY BARRIER DIODES;
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EID: 0031249924
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/S0379-6779(97)81263-5 Document Type: Article |
Times cited : (18)
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References (17)
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