Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Chung, T ^a   Limb, J ^a   Yoo, D ^a,d   Ryou, J H ^a   Lee, W ^a   Shen, S C ^a   Dupuis, R D ^a,d   Chu Kung, B ^b   Feng, M ^b   Keogh, D M ^c   Asbeck, P M ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Center for Organic Photonics and Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMON-EMITTER CURRENT-VOLTAGE CHARACTERISTICS; EMITTER-BASE DESIGN; EMITTER-BASE JUNCTION DESIGN; HOLE CONCENTRATION;

CARRIER CONCENTRATION; HOLE TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33646498782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198014     Document Type: Article

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