A study of the role of various reactions on the density distribution of hydrogen, silylene, and silyl in SiH4/H2 plasma discharges

Physics of Plasmas

Volumn 18, Issue 9, 2011, Pages

  Aman Ur Rehman, ^a,b   Kwon, H C ^a   Park, W T ^c   Lee, J K ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES   (Pakistan)

^c SEMES CO LTD   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUITY EQUATIONS; DENSITY DISTRIBUTIONS; EFFECT OF PRESSURE; FLUID MODELS; FLUID SIMULATIONS; HIGH PRESSURE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED MICROCRYSTALLINE SILICON; LOW PRESSURES; NET EFFECT; PLASMA DISCHARGE; SILANE PLASMAS; SILYLENES; THIN-FILM DEPOSITIONS; TIME-AVERAGED; TIME-AVERAGED REACTION RATES;

AMORPHOUS FILMS; AMORPHOUS SILICON; DEPOSITION; ELECTRIC DISCHARGES; HYDROGEN; HYDROGENATION; MICROCRYSTALLINE SILICON; PRESSURE EFFECTS; REACTION RATES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION;

POPULATION DISTRIBUTION;

EID: 80053540164     PISSN: 1070664X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3630933     Document Type: Article

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