Modeling and experiments of high-pressure VHF SiH4/H2 discharges for higher microcrystalline silicon deposition rate

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6829-6833

  Zhang, X D ^a   Zhang, F R ^a   Amanatides, E ^b   Mataras, D ^b   Zhao, Y ^a  

^a NANKAI UNIVERSITY   (China)

^b UNIVERSITY OF PATRAS   (Greece)

Author keywords

High rates; Microcrystalline silicon; Plasma enhanced chemical vapor deposition; Simulation

Indexed keywords

MICROFLUIDICS; PRESSURE;

CRYSTALLINE VOLUME FRACTION (XC); TOTAL GAS PRESSURE;

VOLUME FRACTION;

EID: 45849142972     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.066     Document Type: Article

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