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Volumn 45, Issue 10 B, 2006, Pages 8172-8176
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Simulation of the electrical properties of SiH4/H2 RF discharges
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Author keywords
Amorphous silicon; Fluid model; Microcrystalline silicon; PECVD
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Indexed keywords
AMORPHOUS SILICON;
ELECTRIC PROPERTIES;
ELECTRODEPOSITION;
ENERGY DISSIPATION;
MICROCRYSTALLINE SILICON;
FLUID MODELS;
IONIZATION RATES;
RF DISCHARGES;
ELECTRIC DISCHARGES;
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EID: 34547921677
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.45.8172 Document Type: Article |
Times cited : (10)
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References (12)
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