Electroluminescence from n-n isotype heterostructures of graded-band-gap ZnMgO : Al and ZnO films on platinized Si

Journal of Physics D: Applied Physics

Volumn 44, Issue 41, 2011, Pages

  Yoon, Jong Gul ^a   Cho, Sung Woo ^a,d   Choi, W S ^b   Kim, Dae Yeol ^a   Chang, H ^b   Kim, C O ^c   Lee, J ^b   Jeon, H ^b   Choi, S H ^c   Noh, T W ^b  

^a Suwon University   (South Korea)

^b Seoul National University   (South Korea)

^c Kyung Hee University   (South Korea)

^d Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTRUMS; FORWARD BIAS; HETEROSTRUCTURE DEVICES; HIGH INJECTION; INTENSITY OF LIGHT; ISOTYPE HETEROSTRUCTURES; NEGATIVE CAPACITANCE; ONSET VOLTAGES; OPERATION VOLTAGE; QUASI-ELECTRIC FIELD; ROOM TEMPERATURE; SHORT-WAVELENGTH EMISSIONS; UNIPOLAR OPERATION; UP-CONVERSION; VISIBLE AND NEAR INFRARED; VISIBLE REGION; ZNMGO; ZNO FILMS;

ALUMINUM; CRYSTALS; ELECTRIC FIELDS; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; HOT ELECTRONS; METALLIC FILMS; ZINC OXIDE;

IMPACT IONIZATION;

EID: 80053356184     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/41/415402     Document Type: Article

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