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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage

(7) Li, Songzhan a,b Fang, Guojia a Long, Hao a Mo, Xiaoming a Huang, Huihui a Dong, Binzhong a Zhao, Xingzhong a

a WUHAN UNIVERSITY (China)

b WUHAN TEXTILE UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; FORWARD BIAS; GAN LAYERS; ISOTYPE HETEROJUNCTIONS; LOW THRESHOLD VOLTAGE; OUTPUT POWER; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; ROOM TEMPERATURE; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION; ULTRAVIOLET LIGHT-EMITTING DIODES; ZNO;

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 77952988674 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3431287 Document Type: Article

Times cited : (22)

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