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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading

(4) Yoon, Jong Gul a Cho, Sung Woo a Lee, E b Chung, J S b

a Suwon University (South Korea)

b Soongsil University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COATED GLASS SUBSTRATES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; HETEROSTRUCTURES; INDIUM TIN OXIDE; ISOTYPE HETEROJUNCTIONS; RECTIFICATION RATIO; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SURFACE LAYERS; ZNMGO; ZNO FILMS;

ELECTRIC PROPERTIES; ENERGY GAP; INDIUM; SCHOTTKY BARRIER DIODES; TIN; ZINC; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 71949101819 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3268787 Document Type: Article

Times cited : (14)

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