Transient modeling of ferroelectric capacitors for nonvolatile memories

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 43, Issue 3, 1996, Pages 450-456

  Sheikholeslami, All ^a   Glenn Gulak, P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC WAVEFORMS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; NONVOLATILE STORAGE; POLARIZATION; SEMICONDUCTOR STORAGE;

FERROELECTRIC CAPACITORS; MACROMODELS; PULSE MEASUREMENT; TRANSIENT MODELING; VOLTAGE WAVEFORM;

CAPACITORS;

EID: 0030150773     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/58.489404     Document Type: Article

References (9)

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2. J. C. Burfootand G. W. Taylor, Polar Dielectrics andTheir Applications. Berkeley: Univ. of California Press, 1979.
3. RAMTRON FM24C16 Product Specification, Ramtron Corp., Colorado Springs, CO, 1994.
4. T. Sumi et al, "A 256-kb nonvolatile ferroelectric memory at 3 V and 100 ns," ISSCC Dig. Tech. Papers, pp. 268-269, 1994.
5. D. E. Dumi, '"A ferroelectric capacitor macromode and parameterization algorithm for SPICE simulation," IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. 41, pp. 360-369, May 1994.
6. N. Abt. "Electrical measurement of ferroelectric capacitors for nonvolatile memory applications," in Mat. Res. Soc. Symp. Proc., vol. 200, pp. 303-312, 1990.
7. R. Moazzami, "Ferroelectric PZT thin films for semiconductor memory," Ph.D. dissertation, Univ. of California, Berkeley, 1991.
8. P. K. Larsen el al., "Nanosecond switching of Lhin ferroelectric films," Appl. Phys. Lett., vol. 59, pp. 611-613, July 29, 1991.
9. V. K. Cliiviikula, private communication. Northern Telecom, Nspean, Ontario, Canada, Dec. 1993.