Large "near junction" thermal resistance reduction in electronics by interface nanoengineering

International Journal of Heat and Mass Transfer

Volumn 54, Issue 25-26, 2011, Pages 5183-5191

  Hu, Ming ^a   Zhang, Xiaoliang ^a,b   Poulikakos, Dimos ^a   Grigoropoulos, Costas P ^c  

^a ETH ZURICH   (Switzerland)

^b INSTITUTE OF ENGINEERING THERMOPHYSICS   (China)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electronics cooling; Interfacial thermal resistance; Molecular dynamics; Near transistor junction

Indexed keywords

ACTIVE REGIONS; AL CONTENT; AL DISTRIBUTION; ALN LAYERS; ELECTRONICS COOLING; HIGH POWER ELECTRONICS; INTERFACIAL ATOMS; INTERFACIAL THERMAL RESISTANCE; MODEL SYSTEM; NANO-ENGINEERING; NANOCONFINEMENT EFFECTS; NANOPILLARS; NEAR TRANSISTOR JUNCTION; NONEQUILIBRIUM MOLECULAR DYNAMICS SIMULATION; ONE-DIMENSIONAL HEAT; PHOTONIC COMPONENTS; SIMULATION DOMAIN; THERMAL CONDUCTANCE; THERMAL TRANSPORT;

ALUMINUM; CRYSTALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HEAT FLUX; HEAT RESISTANCE; HETEROJUNCTIONS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY; VIBRATIONS (MECHANICAL);

ELECTRONIC COOLING;

EID: 80053208884     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2011.08.027     Document Type: Article

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