Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1395-1397

  Manoi, Athikom ^a   Pomeroy, James W ^a   Killat, Nicole ^a   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); heat extraction; metalorganic chemical vapor deposition (MOCVD); Raman thermography; thermal boundary resistance (TBR)

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; HEAT EXTRACTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN THERMOGRAPHY; THERMAL BOUNDARY RESISTANCE;

CHEMICAL RESISTANCE; GALLIUM NITRIDE; HEAT RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMOGRAPHY (IMAGING); THERMOGRAPHY (TEMPERATURE MEASUREMENT); VAPOR DEPOSITION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78649451371     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2077730     Document Type: Article

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