High-efficiency power amplifier

IEEE Microwave Magazine

Volumn 12, Issue 1, 2011, Pages 81-84

  Nemati, Hossein Mashad ^a   Saad, Paul ^a   Fager, Christian ^a   Andersson, Kristoffer ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT BLOCKS; HIGH EFFICIENCY; POWER EFFICIENCY; RF POWER TRANSISTORS; SWITCHED-MODE; WIRELESS COMMUNICATION SYSTEM;

COMMUNICATION SYSTEMS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; POWER AMPLIFIERS; POWER ELECTRONICS; WIRELESS TELECOMMUNICATION SYSTEMS;

MOS DEVICES;

EID: 78951491359     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2010.939314     Document Type: Conference Paper

References (4)

1. S.C. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed. Norwood, MA: Artech House, 2006.
2. A. Grebennikov and N. Sokal, Switch Mode RF Power Amplifiers. Burlington, MA: Newnes, 2007.
3. H.M. Nemati, C. Fager, M. Thorsell, and H. Zirath, "High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model," IEEE Trans. Microwave Theory Tech., vol. 57, no. 7, pp. 1647-1654, July 2009.
4. P. Saad, H.M. Nemati, M. Thorsell, K. Andersson, and C. Fager, "An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz," in Proc. 39th European Microwave Conf., Oct. 2009, pp. 496-499.