A fully analytical model for the series impedance of through-silicon vias with consideration of substrate effects and coupling with horizontal interconnects

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3529-3540

  Xu, Chuan ^a   Kourkoulos, Vassilis ^b   Suaya, Roberto ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

3 D integrated circuits; Analytical impedance modeling; eddy currents; Green's function; high frequency; interconnect; quasi magnetostatic; substrate effects; through silicon via (TSV)

Indexed keywords

3-D INTEGRATED CIRCUIT; ANALYTICAL IMPEDANCE MODELING; HIGH FREQUENCY; INTERCONNECT; QUASI-MAGNETOSTATIC; SUBSTRATE EFFECTS; THROUGH-SILICON VIA (TSV);

EDDY CURRENTS; ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; GREEN'S FUNCTION; MATHEMATICAL MODELS; WIRE;

THREE DIMENSIONAL;

EID: 80053187922     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2162846     Document Type: Article

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