Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Cadix, L ^a,b   Rousseau, M ^a   Fuchs, C ^c   Leduc, P ^c   Thuaire, A ^c   El Farhane, R ^c   Chaabouni, H ^b,c   Anciant, R ^c   Huguenin, J L ^a   Coudrain, P ^a   Farcy, A ^a   Bermond, C ^b   Sillon, N ^c   Flechet B ^b   Ancey, P ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE SAVOIE   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MODELING; ANALYTICAL MODEL; CHIP PERFORMANCE; ELECTRICAL MODELING; ELECTRICAL PARAMETER; EQUIVALENT MODEL; FREQUENCY DEPENDENT; HIGH ASPECT RATIO; HIGH DENSITY; PROCESS OPTIMIZATION; RF MEASUREMENTS; ROADMAP; SUBSTRATE EFFECTS; TEST STRUCTURE; THROUGH SILICON VIAS; THROUGH-SILICON-VIA;

COMPUTER SIMULATION; MATHEMATICAL MODELS; MODELS;

ASPECT RATIO;

EID: 77955591463     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510728     Document Type: Conference Paper

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