Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate

Nanotechnology

Volumn 22, Issue 40, 2011, Pages

  Hadj Alouane, M H ^a,b   Anufriev, R ^a   Chauvin, N ^a   Khmissi, H ^b   Naji, K ^a   Ilahi, B ^b   Maaref, H ^b   Patriarche, G ^c   Gendry, M ^a   Bru Chevallier, C ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SHELLS (STRUCTURES); ZINC SULFIDE;

CORE-SHELL NANOWIRES; GROWTH DIRECTIONS; MICROPHOTOLUMINESCENCE; PHOTOLUMINESCENCE INTENSITIES; RADIATIVE LIFETIME; SILICON SUBSTRATES; SOLID SOURCE MOLECULAR BEAM EPITAXY; TELECOMMUNICATION WAVELENGTHS;

SUBSTRATES;

EID: 80052954705     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/40/405702     Document Type: Article

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