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Volumn 80, Issue 4, 2009, Pages

Microphotoluminescence studies of tunable wurtzite InAs0.85 P0.15 quantum dots embedded in wurtzite InP nanowires

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EID: 69949148475     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.041312     Document Type: Article
Times cited : (19)

References (24)
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  • 11
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    • See EPAPS Document No. E-PRBMDO-80-R26928 for InAs and InP nanowire growth rates as a function of the diameter. The decrease in InAs growth rate for wires with d<9 nm is attribued to the Gibbs-Thomson effect. The InAs growth rate is determined from pure InAs nanowires and does not correspond to the growth rate of the quantum dots as the surface diffusion on the nanowire side facets is different for InP and InAs surfaces. For more information on EPAPS, see
    • See EPAPS Document No. E-PRBMDO-80-R26928 for InAs and InP nanowire growth rates as a function of the diameter. The decrease in InAs growth rate for wires with d<9 nm is attribued to the Gibbs-Thomson effect. The InAs growth rate is determined from pure InAs nanowires and does not correspond to the growth rate of the quantum dots as the surface diffusion on the nanowire side facets is different for InP and InAs surfaces. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.
  • 19
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    • Binding energies of excitons and charged excitons in GaAs/Ga(In)As quantum dots
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  • 23
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    • edited by G. W. Bryant and G. S. Solomon (Artech House, London
    • Optics of Quantum Dots and Wires, edited by, G. W. Bryant, and, G. S. Solomon, (Artech House, London, 2005), pp. 38-45.
    • (2005) Optics of Quantum Dots and Wires , pp. 38-45
  • 24
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    • Yoffe, A.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.