Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Journal of Crystal Growth

Volumn 256, Issue 1-2, 2003, Pages 96-102

  Lei, H P ^a   Wu, H Z ^a   Lao, Y F ^a   Qi, M ^a   Li, A Z ^a   Shen, W Z ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

A1. Emission efficiency; A1. Phonon electron interaction; A1. Photoluminescence; A3. Strained and strain compensated multi quantum wells

Indexed keywords

ACTIVATION ENERGY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

EMISSION EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038148749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01345-9     Document Type: Article

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