메뉴 건너뛰기




Volumn 20, Issue 2, 2005, Pages 417-423

Patterning of sapphire substrates via a solid state conversion process

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; HARDNESS; HEAT TREATMENT; LATTICE CONSTANTS; METALLIC FILMS; NITRIDES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMODYNAMIC STABILITY;

EID: 28044463809     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0050     Document Type: Article
Times cited : (27)

References (32)
  • 1
    • 0002864028 scopus 로고    scopus 로고
    • Group III nitride semiconductors for short wavelength light-emitting devices
    • J.W. Orton, C.T. Foxon: Group III nitride semiconductors for short wavelength light-emitting devices. Rep. Prog. Phys. 61, 1 (1998).
    • (1998) Rep. Prog. Phys. , vol.61 , pp. 1
    • Orton, J.W.1    Foxon, C.T.2
  • 2
    • 0031632796 scopus 로고    scopus 로고
    • InGaN-based laser diodes
    • S. Nakamura: InGaN-based laser diodes. Ann. Rev. Mater. 28, 125 (1998).
    • (1998) Ann. Rev. Mater. , vol.28 , pp. 125
    • Nakamura, S.1
  • 4
    • 0033514605 scopus 로고    scopus 로고
    • Renaissance and progress in nitride semiconductors
    • I. Akasaki: Renaissance and progress in nitride semiconductors. J. Cryst. Growth 198, 885 (1999).
    • (1999) J. Cryst. Growth , vol.198 , pp. 885
    • Akasaki, I.1
  • 5
    • 0031653676 scopus 로고    scopus 로고
    • New development in semiconductor light emitting diodes for short wavelength
    • M. Pilkuhn: New development in semiconductor light emitting diodes for short wavelength. VDE-Verlag, Itg-Fachbericht 150, 71 (1998).
    • (1998) VDE-Verlag, Itg-Fachbericht , vol.150 , pp. 71
    • Pilkuhn, M.1
  • 6
    • 4143135393 scopus 로고    scopus 로고
    • Defects in and applications of III-V nitride semiconductors
    • H. Morkoc: Defects in and applications of III-V nitride semiconductors. Mater. Sci. Forum 239, 119 (1997).
    • (1997) Mater. Sci. Forum , vol.239 , pp. 119
    • Morkoc, H.1
  • 8
    • 0038269509 scopus 로고    scopus 로고
    • Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
    • S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Girolami, and H.I. Erikson: Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition. Appl. Phys. Lett. 70, 420 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 420
    • Rosner, S.J.1    Carr, E.C.2    Ludowise, M.J.3    Girolami, G.4    Erikson, H.I.5
  • 9
    • 0036466672 scopus 로고    scopus 로고
    • Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN
    • M. Hansen, P. Fini, M. Craven, B. Heying, J.S. Speck, and S.P. Denbaars: Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN. J. Cryst. Growth 234, 623 (2002).
    • (2002) J. Cryst. Growth , vol.234 , pp. 623
    • Hansen, M.1    Fini, P.2    Craven, M.3    Heying, B.4    Speck, J.S.5    Denbaars, S.P.6
  • 10
    • 0032092812 scopus 로고    scopus 로고
    • High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor- phase epitaxy
    • C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai: High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor- phase epitaxy. J. Cryst. Growth 189, 61 (1998).
    • (1998) J. Cryst. Growth , vol.189 , pp. 61
    • Sasaoka, C.1    Sunakawa, H.2    Kimura, A.3    Nido, M.4    Usui, A.5    Sakai, A.6
  • 11
    • 0032516703 scopus 로고    scopus 로고
    • The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
    • S. Nakamura: The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science 281, 956 (1998).
    • (1998) Science , vol.281 , pp. 956
    • Nakamura, S.1
  • 12
    • 0000235405 scopus 로고    scopus 로고
    • Optical characterization of lateral epitaxial overgrown GaN layer
    • J.A. Fretas, Jr., O-H. Nam, and R.F. Davis: Optical characterization of lateral epitaxial overgrown GaN layer. Appl. Phys. Lett. 72, 2990 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 2990
    • Fretas Jr., J.A.1    Nam, O.-H.2    Davis, R.F.3
  • 13
  • 15
    • 0032114637 scopus 로고    scopus 로고
    • InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
    • T. Mukai, K. Takekawa, and S. Nakamura: InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates. Jpn. J. Appl. Phys. 37, L839 (1998).
    • (1998) Jpn. J. Appl. Phys. , vol.37
    • Mukai, T.1    Takekawa, K.2    Nakamura, S.3
  • 16
    • 0036566171 scopus 로고    scopus 로고
    • Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN (0001) films via MOVPE
    • A.M. Rokowski, P.Q. Miraglia, E.A. Preble, S. Einfeldt, and R.F. Davis: Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN (0001) films via MOVPE. J. Cryst. Growth 241, 141 (2002).
    • (2002) J. Cryst. Growth , vol.241 , pp. 141
    • Rokowski, A.M.1    Miraglia, P.Q.2    Preble, E.A.3    Einfeldt, S.4    Davis, R.F.5
  • 17
    • 0033115908 scopus 로고
    • Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
    • T. Zheleva, S. Smith, D. Thomson, and K. Linthicum: Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films. J. Electron. Mater. 28, L5 (1995).
    • (1995) J. Electron. Mater. , vol.28
    • Zheleva, T.1    Smith, S.2    Thomson, D.3    Linthicum, K.4
  • 18
    • 0032620707 scopus 로고    scopus 로고
    • Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
    • D. Zubia and S.D. Hersee: Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials. J. Appl. Phys. 85, 6492 (1999).
    • (1999) J. Appl. Phys. , vol.85 , pp. 6492
    • Zubia, D.1    Hersee, S.D.2
  • 19
  • 20
    • 0033314710 scopus 로고    scopus 로고
    • Surface and interface properties of alumina via model studies of microdesigned interfaces
    • M. Kitayama, J.D. Powers, L. Kulinsky, and A.M. Glaeser: Surface and interface properties of alumina via model studies of microdesigned interfaces. J. Eur. Ceram. Soc. 19, 2191 (1999).
    • (1999) J. Eur. Ceram. Soc. , vol.19 , pp. 2191
    • Kitayama, M.1    Powers, J.D.2    Kulinsky, L.3    Glaeser, A.M.4
  • 23
    • 0037147183 scopus 로고    scopus 로고
    • A novel process for the generation of pristine sapphire surfaces
    • H. Park and H.M. Chan: A novel process for the generation of pristine sapphire surfaces. Thin Solid Films 422, 135 (2002).
    • (2002) Thin Solid Films , vol.422 , pp. 135
    • Park, H.1    Chan, H.M.2
  • 24
    • 0002549784 scopus 로고
    • The kinetics of the oxidation of Al in oxygen at high temperature
    • A.F. Beck, M.A. Heine, E.J. Caule, and M.J. Pryor: The kinetics of the oxidation of Al in oxygen at high temperature. Corros. Sci. 7, 1 (1967).
    • (1967) Corros. Sci. , vol.7 , pp. 1
    • Beck, A.F.1    Heine, M.A.2    Caule, E.J.3    Pryor, M.J.4
  • 26
    • 0025419185 scopus 로고
    • Effect of magnesia solute on surface diffusion in sapphire and the role of magnesia in the sintering of alumina
    • S.J. Bennison and M.P. Harmer: Effect of magnesia solute on surface diffusion in sapphire and the role of magnesia in the sintering of alumina. J. Am. Ceram. Soc. 73, 833 (1990).
    • (1990) J. Am. Ceram. Soc. , vol.73 , pp. 833
    • Bennison, S.J.1    Harmer, M.P.2
  • 27
    • 0040706647 scopus 로고    scopus 로고
    • Investigating surface transport in ceramics using microdesigned interfaces
    • (Inst. Mater. London, U.K.)
    • A.M. Glaeser: Investigating surface transport in ceramics using microdesigned interfaces, in Ceramic Interfaces: Properties and Applications (Inst. Mater. London, U.K., 1998), p. 241.
    • (1998) Ceramic Interfaces: Properties and Applications , pp. 241
    • Glaeser, A.M.1
  • 28
    • 0035300664 scopus 로고    scopus 로고
    • Surface morphologies: Transient and equilibrium shapes
    • H.P. Bonzel: Surface morphologies: Transient and equilibrium shapes. Interface Sci. 9, 21 (2001).
    • (2001) Interface Sci. , vol.9 , pp. 21
    • Bonzel, H.P.1
  • 29
    • 21544475638 scopus 로고
    • Flattening of nearly plane solid surfaces due to capillarity
    • W.W. Mullins: Flattening of nearly plane solid surfaces due to capillarity. J. Appl. Phys. 80, 77 (1959).
    • (1959) J. Appl. Phys. , vol.80 , pp. 77
    • Mullins, W.W.1
  • 30
    • 0030130205 scopus 로고    scopus 로고
    • Smoothing of perturbed vicinal surfaces
    • H.P. Bonzel and W.W. Mullins: Smoothing of perturbed vicinal surfaces. Surf. Sci. 350, 285 (1996).
    • (1996) Surf. Sci. , vol.350 , pp. 285
    • Bonzel, H.P.1    Mullins, W.W.2
  • 31
    • 0032399736 scopus 로고    scopus 로고
    • Exploring spatial resolution in electron back-scattered diffraction experiments via Monte Carlo simulation
    • S.X. Ren, E.A. Kenik, K.B. Alexander, and A. Goyal: Exploring spatial resolution in electron back-scattered diffraction experiments via Monte Carlo simulation. Microsc. Microanal. 4, 15 (1998).
    • (1998) Microsc. Microanal. , vol.4 , pp. 15
    • Ren, S.X.1    Kenik, E.A.2    Alexander, K.B.3    Goyal, A.4
  • 32
    • 0011086113 scopus 로고
    • Penetration and energy loss theory of electrons in solid targets
    • K. Kanaya and S. Okayama: Penetration and energy loss theory of electrons in solid targets. J. Phys. D Appl. Phys. 5, 43 (1972).
    • (1972) J. Phys. D Appl. Phys. , vol.5 , pp. 43
    • Kanaya, K.1    Okayama, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.