SCOPUS 정보 검색 플랫폼

Volumn 104, Issue 1, 2011, Pages 105-111

Microscopic indium distribution and electron localization in zinc blende InGaN alloys and InGaN/GaN strained quantum wells

(6) Zhu, S G a Shi, J J a Zhang, S a Yang, M a Bao, Z Q a Zhang, M a,b

a PEKING UNIVERSITY (China)

b INNER MONGOLIA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; DISTRIBUTION PATTERNS; ELECTRON LOCALIZATIONS; EMISSION MECHANISM; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; HIGH CONCENTRATION; INGAN ALLOY; INGAN/GAN; RADIATIVE RECOMBINATION; RANDOM ALLOY; STRAINED QUANTUM WELLS; VALENCE-BAND MAXIMUMS; WURTZITE STRUCTURE; ZINC BLENDE; ZINCBLENDE STRUCTURES;

ATOMS; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ELECTRONS; INDIUM; INDIUM ALLOYS; LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS; ZINC; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 80052585242 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-011-4473-8 Document Type: Conference Paper

Times cited : (6)

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