SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 37, 2011, Pages 14254-14258

Facile chemical rearrangement for photopatterning of POSS derivatives

(7) Rathore, Jitendra a Dai, Qiu a Davis, Blake a Sherwood, Mark a Miller, Robert D a Lin, Qinghuang b Nelson, Alshakim a

a IBM ALMADEN RESEARCH CENTER (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKED; CROSSLINKING REACTION; LOW-K DIELECTRIC FILMS; LOW-K MATERIALS; NANO-POROUS; PHOTO PATTERNING; PHOTOACID GENERATORS; PHOTOSENSITIVE AGENTS; SACRIFICIAL LAYER; SI-O-SI BOND; THERMAL REARRANGEMENT;

DIELECTRIC FILMS; DIELECTRIC PROPERTIES; PHOTORESISTORS;

CROSSLINKING;

EID: 80052539827 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm10882d Document Type: Article

Times cited : (10)

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