3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP

Ultramicroscopy

Volumn 108, Issue 6, 2008, Pages 536-539

  Moore, J S ^a   Jones, K S ^a   Kennel, H ^b   Corcoran, S ^b  

^a University of Florida   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Dopant characterization; Local electrode atom probe

Indexed keywords

COMPUTER SIMULATION; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SILICON WAFERS;

DOPANT CHARACTERIZATION; LOCAL ELECTRODE ATOM PROBE (LEAP);

SEMICONDUCTOR DOPING;

ARTICLE; DIFFUSION; ELECTRODE; LASER; LASER ASSISTED LOCAL ELECTRODE ATOM PROBE; MOLECULAR PROBE; SEMICONDUCTOR; SIMULATION; STRUCTURAL HOMOLOGY; STRUCTURE ANALYSIS; THREE DIMENSIONAL IMAGING; TRANSMISSION ELECTRON MICROSCOPY;

EID: 41949123106     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2007.08.008     Document Type: Article

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