Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 9, 2011, Pages 2231-2234

  Shin, Hyun Soo ^a   Rim, You Seung ^a   Mo, Yeon Gon ^b   Choi, Chaun Gi ^b   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

amorphous InGaZnO; annealing; positive bias temperature stress; thin film transistors

Indexed keywords

BANDBENDING; DEFECT PASSIVATION; ELECTRICAL CHARACTERISTIC; ETCH-STOP LAYERS; FABRICATED DEVICE; HIGH-PRESSURE ANNEALING; POSITIVE BIAS TEMPERATURES; SOURCE-DRAIN; THERMAL-ANNEALING;

ANNEALING; HIGH PRESSURE EFFECTS; INTERNET PROTOCOLS; PASSIVATION; THIN FILM DEVICES; THIN FILM TRANSISTORS;

AMORPHOUS FILMS;

EID: 80052426276     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127243     Document Type: Article

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