Modeling the temperature dependence of Fe-FET static characteristics based on Landau's theory

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3162-3169

  Salvatore, Giovanni A ^a   Lattanzio, Livio ^a   Bouvet, Didier ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

Ferroelectrics; Landau's theory; MOSFETs; subthreshold swing; temperature; transconductance; vinylidene fluoride trifluorethylene P(VDF TrFE)

Indexed keywords

ANALYTICAL MODEL; FULLY DEPLETED SILICON-ON-INSULATOR; GATE STACKS; HIGH TEMPERATURE; LANDAU'S THEORY; MOS-FET; MOSFETS; PERFORMANCE DEGRADATION; PERFORMANCE FACTORS; STATIC CHARACTERISTIC; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; VINYLIDENE FLUORIDE;

CURIE TEMPERATURE; DC POWER TRANSMISSION; FERROELECTRICITY; LOGIC GATES; MATHEMATICAL MODELS; MESFET DEVICES; MOSFET DEVICES; SILICON COMPOUNDS; SILICON OXIDES; TRANSCONDUCTANCE;

FERROELECTRIC MATERIALS;

EID: 80052085483     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2160868     Document Type: Article

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