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Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

Ferroelectric transistors with improved characteristics at high temperature

(6) Salvatore, Giovanni A a Lattanzio, Livio a Bouvet, Didier a Stolichnov, Igor a Setter, Nava a Ionescu, Adrian M a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; DIELECTRIC RESPONSE; FERROELECTRIC LAYERS; FERROELECTRIC TRANSISTORS; FULLY DEPLETED SILICON-ON-INSULATOR; GATE STACKS; HIGH TEMPERATURE; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; PERFORMANCE DEGRADATION; PHENOMENOLOGICAL MODELS; STATIC CHARACTERISTIC; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; VINYLIDENE FLUORIDE;

ANALOG CIRCUITS; CURIE TEMPERATURE; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; LOGIC GATES; MOSFET DEVICES; SILICON COMPOUNDS; SILICON OXIDES; TRANSCONDUCTANCE;

FERROELECTRIC MATERIALS;

EID: 77955724519 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3467471 Document Type: Article

Times cited : (29)

References (16)

1
- 2342623477
- IELEEJ 0916-8524.
- T. Sakurai IEICE Trans. Electron. IELEEJ 0916-8524 E87-C, 429 (2004).
- (2004) IEICE Trans. Electron. , vol.E87-C , pp. 429
- Sakurai, T.¹

2
- 0030084276
- IJSCBC 0018-9200,. 10.1109/4.487994
- J. P. Eggermont, D. De Ceuster, D. Flandre, B. Gentinne, P. G. A. Jespers, and J. P. Colinge, IEEE J. Solid-State Circuits IJSCBC 0018-9200 31, 179 (1996). 10.1109/4.487994
- (1996) IEEE J. Solid-State Circuits , vol.31 , pp. 179
- Eggermont, J.P.¹ De Ceuster, D.² Flandre, D.³ Gentinne, B.⁴ Jespers, P.G.A.⁵ Colinge, J.P.⁶

3
- 0038426995
- High-temperature electronics - A role for wide bandgap semiconductors?
- DOI 10.1109/JPROC.2002.1021571, PII S0018921902055780
- P. G. Neudeck, R. S. Okojie, and L. Y. Chen, Proc. IEEE IEEPAD 0018-9219 90, 1065 (2002). 10.1109/JPROC.2002.1021571 (Pubitemid 43785873)
- (2002) Proceedings of the IEEE , vol.90 , Issue.6 , pp. 1065-1076
- Neudeck, P.G.¹ Okojie, R.S.² Chen, L.-Y.³

4
- 0035696689
- Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
- DOI 10.1109/16.974714, PII S001893830110095X
- D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 2842 (2001). 10.1109/16.974714 (Pubitemid 34091897)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.12 , pp. 2842-2850
- Esseni, D.¹ Mastrapasqua, M.² Celler, G.K.³ Fiegna, C.⁴ Selmi, L.⁵ Sangiorgi, E.⁶

5
- 33644633458
- EDLEDZ 0741-3106,. 10.1109/LED.2006.869941
- J. -P. Colinge, L. Floyd, A. J. Quinn, G. Redmond, J. C. Alderman, W. Xiong, C. R. Cleavelin, T. Schulz, K. Schruefer, G. Knoblinger, and P. Patruno, IEEE Electron Device Lett. EDLEDZ 0741-3106 27, 172 (2006). 10.1109/LED.2006. 869941
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 172
- Colinge, J.-P.¹ Floyd, L.² Quinn, A.J.³ Redmond, G.⁴ Alderman, J.C.⁵ Xiong, W.⁶ Cleavelin, C.R.⁷ Schulz, T.⁸ Schruefer, K.⁹ Knoblinger, G.¹⁰ Patruno, P.¹¹

6
- 0037421387
- APPLAB 0003-6951,. 10.1063/1.1533844
- T. Reece, S. Ducharme, A. V. Sorokin, and M. Poulsen, Appl. Phys. Lett. APPLAB 0003-6951 82, 142 (2003). 10.1063/1.1533844
- (2003) Appl. Phys. Lett. , vol.82 , pp. 142
- Reece, T.¹ Ducharme, S.² Sorokin, A.V.³ Poulsen, M.⁴

7
- 14744284800
- High-performance solution-processed polymer ferroelectric field-effect transistors
- DOI 10.1038/nmat1329
- R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. De Leeuw, Nature Mater. NMAACR 1476-1122 4, 243 (2005). 10.1038/nmat1329 (Pubitemid 40330276)
- (2005) Nature Materials , vol.4 , Issue.3 , pp. 243-248
- Naber, R.C.G.¹ Tanase, C.² Blom, P.W.M.³ Gelinck, G.H.⁴ Marsman, A.W.⁵ Touwslager, F.J.⁶ Setayesh, S.⁷ De Leeuw, D.M.⁸

8
- 58049112400
- Edinburgh, September 15-19, article no. 4681724
- G. A. Salvatore, D. Bouvet, I. Stolitchnov, N. Setter, and A. M. Ionescu, Proceedings of ESSDERC, Edinburgh, September 15-19, 2008, article no. 4681724, pp. 162-165.
- (2008) Proceedings of ESSDERC , pp. 162-165
- Salvatore, G.A.¹ Bouvet, D.² Stolitchnov, I.³ Setter, N.⁴ Ionescu, A.M.⁵

9
- 65249160758
- NALEFD 1530-6984,. 10.1021/nl801656w
- W. Fu, Z. Xu, X. Bai, C. Gu, and E. Wang, Nano Lett. NALEFD 1530-6984 9, 921 (2009). 10.1021/nl801656w
- (2009) Nano Lett. , vol.9 , pp. 921
- Fu, W.¹ Xu, Z.² Bai, X.³ Gu, C.⁴ Wang, E.⁵

10
- 0005466909
- ISJEAZ 1530-437X,. 10.1109/JSEN.2001.954832
- D. Damjanovic, P. Muralt, and N. Setter, IEEE Sens. J. ISJEAZ 1530-437X 1, 191 (2001). 10.1109/JSEN.2001.954832
- (2001) IEEE Sens. J. , vol.1 , pp. 191
- Damjanovic, D.¹ Muralt, P.² Setter, N.³

11
- 1842484069
- JOELFJ 1385-3449,. 10.1023/B:JECR.0000015661.81386.e6
- A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. JOELFJ 1385-3449 11, 5 (2003). 10.1023/B:JECR. 0000015661.81386.e6
- (2003) J. Electroceram. , vol.11 , pp. 5
- Tagantsev, A.K.¹ Sherman, V.O.² Astafiev, K.F.³ Venkatesh, J.⁴ Setter, N.⁵

12
- 23044529080
- 10.1070/PU2001v044n10ABEH001021
- V. L. Ginzburg, Physics-Uspekhi 44, 1037 (2001). 10.1070/ PU2001v044n10ABEH001021
- (2001) Physics-Uspekhi , vol.44 , pp. 1037
- Ginzburg, V.L.¹

13
- 84889862190
- 3rd ed. (Wiley, Hoboken, New Jersey).
- S. M. Sze and K. K. Ng, " Physics of Semiconductor Devices," 3rd ed. (Wiley, Hoboken, New Jersey, 2006).
- (2006) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

14
- 0003767280
- (Electrochemical Society, Princeton).
- E. Kooi and J. A. Appels, Semiconductor Silicon (Electrochemical Society, Princeton, 1973).
- (1973) Semiconductor Silicon
- Kooi, E.¹ Appels, J.A.²

15
- 0026642775
- ADPHAH 0001-8732,. 10.1080/00018739200101463
- R. Kepler and R. Anderson, Adv. Phys. ADPHAH 0001-8732 41, 1 (1992). 10.1080/00018739200101463
- (1992) Adv. Phys. , vol.41 , pp. 1
- Kepler, R.¹ Anderson, R.²

16
- 33645915742
- JAPIAU 0021-8979,. 10.1063/1.2186004
- V. Sherman, A. Tagantsev, and N. Setter, J. Appl. Phys. JAPIAU 0021-8979 99, 074104 (2006). 10.1063/1.2186004
- (2006) J. Appl. Phys. , vol.99 , pp. 074104
- Sherman, V.¹ Tagantsev, A.² Setter, N.³

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