Deep traps in InAlN lattice-matched to GaN grown by metal organic chemical vapor deposition studied by deep-level transient spectroscopy

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

  Chen, Zhitao ^a   Fujita, Kazuhisa ^a   Ichikawa, Junki ^a   Sakai, Yusuke ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE KINETICS; CRYSTAL QUALITIES; DEEP TRAPS; LATTICE-MATCHED; ROCKING CURVES;

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POINT DEFECTS; X RAY DIFFRACTION;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 80051989907     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.081001     Document Type: Article

References (25)

1. R. Butte, J.-F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H. J. Buehlmann, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, M. Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, P. G. Lagoudakis, J. J. Baumberg, and N. Grandjean: J. Phys. D 40 (2007) 6328.
2. J. Dorsaz, J.-F. Carlin, S. Gradecak, and M. Ilegems: J. Appl. Phys. 97 (2005) 084505.
3. A. Dadgar, F. Schulze, J. Biasing, A. Diez, A. Krost, M. Neuburger, E. Kohn, I. Daumiller, and M. Kunze: Appl. Phys. Lett. 85 (2004) 5400.
4. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean: Appl. Phys. Lett. 89 (2006) 062106.
5. E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann, R. Butte, M. Laugt, M. Ilegems, and N. Grandjean: Appl. Phys. Lett. 88 (2006) 051108.
6. S. Senda, H. Jiang, and T. Egawa: Appl. Phys. Lett. 92 (2008) 203507.
7. Z. T. Chen, S. X. Tan, Y. Sakai, and T. Egawa: Appl. Phys. Lett. 94 (2009) 213504.
8. H. J. Kim, S. Choi, S.-S. Kim, J.-H. Ryou, P. D. Yoder, R. D. Dupuis, A. M. Fischer, K Sun, and F. A. Ponce: Appl. Phys. Lett. 96 (2010) 101102.
9. S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce: Appl. Phys. Lett. 96 (2010) 221105.
10. A. Castiglia, J.-F. Carlin, E. Feltin, G. Cosendey, J. Dorsaz, and N. Grandjean: Appl. Phys. Lett. 97 (2010) 111104.
11. Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, and H. Morkoc: Appl. Phys. Lett. 72 (1998) 2277.
12. C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev, and H. Morkoc: Appl. Phys. Lett. 72 (1998) 1211.
13. H. K. Cho, C. S. Kim, and C.-H. Hong: J. Appl. Phys. 94 (2003) 1485.
14. D. Johnstone, S. Dogan, J. Leach, Y. T. Moon, Y. Fu, Y. Hu, and H. Morkoc: Appl. Phys. Lett. 85 (2004) 4058.
15. Z.-Q. Fang, D. C. Look, D. H. Kim, and I. Adesida: Appl. Phys. Lett. 87 (2005) 182115.
16. D. Kindl, P. Hubík, J. Krištofik, J. J. Mareš, Z. Výborný, M. R. Leys, and S. Boeykens: J. Appl. Phys. 105 (2009) 093706.
17. Z. T. Chen, Y. Sakai, J. C. Zhang, T. Egawa, J. J. Wu, H. Miyake, and K. Hiramatsu: Appl. Phys. Lett. 95 (2009) 083504.
18. Z. T. Chen, K Xu, L. P. Guo, Z. J. Yang, Y. Y. Su, X. L. Yang, Y. B. Pan, B. Shen, H. Zhang, and G. Y. Zhang: J. Cryst. Growth 294 (2006) 156.
19. O. Ambacher, J. Smart, J. R Shealy, N. G. Weimann, K Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck: J. Appl. Phys. 85 (1999) 3222.
20. J. Osvald: J. Appl. Phys. 106 (2009) 013708.
21. J.-F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G Christmann, E. Feltin, R Butte, and N. Grandjean: Phys. Status Solidi B 242 (2005) 2326.
22. B. Chatterjee and S. A. Ringel: J. Appl. Phys. 77 (1995) 3885.
23. P. Omling, E. R. Weber, L. Montelius, H. Alexander, and J. Michel: Phys. Rev. B 32 (1985) 6571.
24. T. Wosihski: J. Appl. Phys. 65 (1989) 1566.
25. Y. S. Park, M. Lee, K Jeon, I. T. Yoon, Y. Shon, H. Im, C. J. Park, H. Y. Cho, and M.-S. Han: Appl. Phys. Lett. 97 (2010) 112110.