SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics

(1) Osvald, J a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN HETEROJUNCTION; ALGAN/GAN HETEROSTRUCTURES; AS DOPING; C-V CURVE; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE-VOLTAGE TECHNIQUES; DIFFUSION EQUATIONS; ELECTRICAL PARAMETER; FORWARD BIAS; HETEROJUNCTION CAPACITOR; SCHOTTKY BARRIER HEIGHTS; SHEET CARRIER CONCENTRATION; SIMULTANEOUS SOLUTION; VOLTAGE DEPENDENCE;

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOS CAPACITORS; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

TWO DIMENSIONAL ELECTRON GAS;

EID: 67650739422 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3159014 Document Type: Article

Times cited : (16)

References (12)

1
- 38549088374
- 0003-6951,. 10.1063/1.2835708
- J. R. Shealy and R. J. Brown, Appl. Phys. Lett. 0003-6951 92, 132101 (2008). 10.1063/1.2835708
- (2008) Appl. Phys. Lett. , vol.92 , pp. 132101
- Shealy, J.R.¹ Brown, R.J.²

2
- 67650718088
- 1610-1634,. 10.1002/pssc.200390056
- T. Makimoto, K. Kumakura, and N. Kobayashi, Phys. Status Solidi C 1610-1634 0, 334, 2002. 10.1002/pssc.200390056
- (2002) Phys. Status Solidi C , vol.0 , pp. 334
- Makimoto, T.¹ Kumakura, K.² Kobayashi, N.³

3
- 59349114272
- 1555-130X,. 10.1166/jno.2006.212
- W. L. Lui, Y. L. Chen, A. A. Balandin, and K. L. Wang, J. Nanoelectron. Optoelectron. 1555-130X 1, 258 (2006). 10.1166/jno.2006.212
- (2006) J. Nanoelectron. Optoelectron. , vol.1 , pp. 258
- Lui, W.L.¹ Chen, Y.L.² Balandin, A.A.³ Wang, K.L.⁴

4
- 36849030684
- 0003-6951,. 10.1063/1.2823607
- Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, A. M. Dabiran, A. M. Wowchak, A. V. Osinsky, B. Cui, P. P. Chow, and S. J. Pearton, Appl. Phys. Lett. 0003-6951 91, 232116 (2007). 10.1063/1.2823607
- (2007) Appl. Phys. Lett. , vol.91 , pp. 232116
- Polyakov, Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Markov, A.V.⁴ Dabiran, A.M.⁵ Wowchak, A.M.⁶ Osinsky, A.V.⁷ Cui, B.⁸ Chow, P.P.⁹ Pearton, S.J.¹⁰

5
- 44649100738
- 0021-8979,. 10.1063/1.2924334
- M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz, J. Appl. Phys. 0021-8979 103, 104510 (2008). 10.1063/1.2924334
- (2008) J. Appl. Phys. , vol.103 , pp. 104510
- Miczek, M.¹ Mizue, C.² Hashizume, T.³ Adamowicz, B.⁴

6
- 42749096765
- 0038-1101,. 10.1016/j.sse.2008.01.028
- P. Kordoš, D. Gregušová, R. Stoklas, Š. Gaži, and J. Novák, Solid-State Electron. 0038-1101 52, 973 (2008). 10.1016/j.sse.2008.01.028
- (2008) Solid-State Electron. , vol.52 , pp. 973
- Kordoš, P.¹ Gregušová, D.² Stoklas, R.³ Gaži, Š.⁴ Novák, J.⁵

7
- 18644372023
- 0003-6951,. 10.1063/1.1861122
- P. D. Ye, B. Yang, K. K. Ng, J. Blude, G. D. Wilk, S. Halder, and J. C. M. Hwang, Appl. Phys. Lett. 0003-6951 86, 063501 (2005). 10.1063/1.1861122
- (2005) Appl. Phys. Lett. , vol.86 , pp. 063501
- Ye, P.D.¹ Yang, B.² Ng, K.K.³ Blude, J.⁴ Wilk, G.D.⁵ Halder, S.⁶ Hwang, J.C.M.⁷

8
- 4944222383
- 0021-4922,. 10.1143/JJAP.41.2531
- Y. -G. Zhou, B. Shen, T. Someya, H. -Q. Yu, J. Liu, H. -M. Zhou, R. Zhang, Y. Shi, Y. -D. Zheng, and Y. Arakawa, Jpn. J. Appl. Phys., Part 1 0021-4922 41, 2531 (2002). 10.1143/JJAP.41.2531
- (2002) Jpn. J. Appl. Phys., Part 1 , vol.41 , pp. 2531
- Zhou, Y.-G.¹ Shen, B.² Someya, T.³ Yu, H.-Q.⁴ Liu, J.⁵ Zhou, H.-M.⁶ Zhang, R.⁷ Shi, Y.⁸ Zheng, Y.-D.⁹ Arakawa, Y.¹⁰

9
- 0036678391
- 0256-307X,. 10.1088/0256-307X/19/8/343
- Y. -G. Zhou, B. Shen, H. -Q. Yu, J. Liu, H. -M. Zhou, R. Zhang, Y. Shi, Y. -D. Zheng, T. Somyeva, and Y. Arakawa, Chin. Phys. Lett. 0256-307X 19, 1172 (2002). 10.1088/0256-307X/19/8/343
- (2002) Chin. Phys. Lett. , vol.19 , pp. 1172
- Zhou, Y.-G.¹ Shen, B.² Yu, H.-Q.³ Liu, J.⁴ Zhou, H.-M.⁵ Zhang, R.⁶ Shi, Y.⁷ Zheng, Y.-D.⁸ Somyeva, T.⁹ Arakawa, Y.¹⁰

10
- 0035390063
- 0038-1101,. 10.1016/S0038-1101(00)00242-2
- R. Anholt, Solid-State Electron. 0038-1101 45, 1189 (2001). 10.1016/S0038-1101(00)00242-2
- (2001) Solid-State Electron. , vol.45 , pp. 1189
- Anholt, R.¹

11
- 0000690444
- 0021-8979,. 10.1063/1.346702
- C. E. Korman and I. D. Mayergoyz, J. Appl. Phys. 0021-8979 68, 1324 (1990). 10.1063/1.346702
- (1990) J. Appl. Phys. , vol.68 , pp. 1324
- Korman, C.E.¹ Mayergoyz, I.D.²

12
- 0000196038
- 0038-1101,. 10.1016/0038-1101(94)00240-G
- M. Ogawa, H. Matsubayashi, H. Ohta, and T. Miyoshi, Solid-State Electron. 0038-1101 38, 1197 (1995). 10.1016/0038-1101(94)00240-G
- (1995) Solid-State Electron. , vol.38 , pp. 1197
- Ogawa, M.¹ Matsubayashi, H.² Ohta, H.³ Miyoshi, T.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.