Etch characterization of TiO2 thin films using metal-insulator-metal capacitor in adaptively coupled plasma

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 3, 2011, Pages

  Woo, Jong Chang ^a   Joo, Young Hee ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POWER; COUPLED PLASMA; ETCH MECHANISM; ETCH RATES; ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING PARAMETERS; GAS MIXING RATIO; METAL-INSULATOR-METAL CAPACITORS; OXIDE BONDS; PROCESS PRESSURE; TIO; VOLATILE REACTIONS;

ETCHING; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; METAL INSULATOR BOUNDARIES; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 80051973824     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.08KC02     Document Type: Conference Paper

References (20)

1. J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai: J. Vac. Sci. Technol. B 21 (2003) 2163.
2. M. Darnon, T. Chevolleau, D. Eon, L. Vallier, J. Torres, and O. Joubert: J. Vac. Sci. Technol. B 24 (2006) 2262.
3. A. Le Gouil, O. Joubert, G. Cunge, Tchevolleau, L. Vallier, B. Chenevier, and I. Matko: J. Vac. Sci. Technol. B 25 (2007) 767.
4. H. S. Kim, S. A. Campbell, and D. C. Gilmer: IEEE Electron Device Lett. 18 (1997) 465.
5. D. Park, Y. C. King, Q. Lu, T. J. King, C. Hu, A. Kalnitsky, S. P. Tay, and C. C. Cheng: IEEE Electron Device Lett. 19 (1998) 441.
6. U. Ehrke, A. Sears, L. Alff, and D. Reisinger: Appl. Surf. Sci. 231-232 (2004) 598.
7. R. J. Gaboriaud, F. Paumier, F. Pailloux, and P. Guerin: Mater. Sci. Eng. B 109 (2004) 34.
8. W. U. Chung, S. R. Oh, J. H. You, K. T. Lim, Y. K. Oh, and N. H. Kim: Proc. 13th Korean Conf. Semiconductor, 2006, p. 909.
9. S. Tabara: Jpn. J. Appl. Phys. 36 (1997) 2508.
10. H. K. Kim, J. W. Bae, T. K. Kim, K. K. Kim, T. Y. Seong, and I. Adesida: J. Vac. Sci. Technol. B 21 (2003) 800.
11. G. H. Kim, C. I. Kim, and A. M. Efremov: Vacuum 79 (2005) 231.
12. B. Cheng, M. Cao, R. Rao, A. Inani, P. V. Noorde, W. M. Greene, J. M. C. Stork, Z. Yu, P. M. Zeitzoff, and J. C. S. Woo: IEEE Trans. Electron Devices 46 (1999) 1537.
13. S. J. Lee, I. H. Cho, H. W. Kim, S. J. Hong, and H. Y. Lee: Trans. Electr. Electron. Mater. 10 (2009) 177.
14. Y. S. Kim and Y. Shimogaki: J. Vac. Sci. Technol. A 19 (2001) 2642.
15. I. Bertoti, M. Mohai, J. L. Sullivan, and S. O. Saied: Appl. Surf. Sci. 84 (1995) 357.
16. R. d'Agostino, F. Fracassi, and C. Pacifico: J. Appl. Phys. 72 (1992) 4351.
17. I. Bertoti, M. Mohai, J. L. Sullivan, and S. O. Saied: Appl. Surf. Sci. 84 (1995) 357.
18. R. d'Agostino, F. Fracassi, and C. Pacifico: J. Appl. Phys. 72 (1992) 4351.
19. T. Matsuki, T. Watanabe, T. Miura, N. Mise, T. Eimori, Y. Nara, Y. Ohji, A. Uedono, and K. Yamada: Jpn. J. Appl. Phys. 46 (2007) L1219.
20. G. Prumper, X. J. Liu, K. Ueda, and Y. Tamenori: Radiat. Phys. Chem. 75 (2006) 2019.