Etching characteristics of TiN used as hard mask in dielectric etch process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2262-2270

  Darnon, M ^a   Chevolleau, T ^a   Eon, D ^a   Vallier, L ^a   Torres, J ^b   Joubert, O ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ETCHING; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC ETCH PROCESS; ETCH RATE; PLASMA SURFACE INTERACTION;

TITANIUM NITRIDE;

EID: 33749333397     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2338048     Document Type: Article

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