Electrical characteristics of ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 4, 2011, Pages 2856-2860

  Okamoto, Gaku ^a   Kutsuki, Katsuhiro ^a   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Electrical properties; Ge MIS; Ge3N4; Interface state density; Plasma nitridation

Indexed keywords

ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; GATE LEAKAGE CURRENT DENSITY; GE-MIS; INSULATING PROPERTIES; INTERFACE STATE DENSITY; METAL-INSULATOR SEMICONDUCTOR DEVICES; PLASMA NITRIDATION;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATE DIELECTRICS; INTERFACE STATES; MIM DEVICES; NITRIDATION;

GERMANIUM;

GERMANIUM; NANOMATERIAL; NITROGEN;

ARTICLE; CHEMISTRY; ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; PLASMA GAS; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; NITROGEN; PARTICLE SIZE; PLASMA GASES; SEMICONDUCTORS;

EID: 80051947011     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2011.3900     Document Type: Article

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