Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

Solid-State Electronics

Volumn 63, Issue 1, 2011, Pages 100-104

  Tang, M H ^a   Zeng, Z Q ^a   Li, J C ^b   Wang, Z P ^a   Xu, X L ^a   Wang, G Y ^a   Zhang, L B ^a   Yang, S B ^a   Xiao, Y G ^a   Jiang, B ^a  

^a XIANGTAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

CE; Filament theory; Interface effect; La doped ZnO; MIM; RRAM

Indexed keywords

CHEMICAL SOLUTION DEPOSITION METHOD; DIFFERENT STRUCTURE; DIFFERENT SUBSTRATES; INTERFACE EFFECT; MIM; NON-VOLATILE MEMORY APPLICATION; OPERATION VOLTAGE; POLYCRYSTALLINE FILM; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION MEASUREMENT; RRAM; SWITCHING CYCLES; ZNO; ZNO FILMS;

RANDOM ACCESS STORAGE; SILICON; SUBSTRATES; SWITCHING SYSTEMS; ZINC OXIDE;

LANTHANUM;

EID: 80051802356     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.05.023     Document Type: Article

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