The production of SiC nanowalls sheathed with a few layers of strained graphene and their use in heterogeneous catalysis and sensing applications

Carbon

Volumn 49, Issue 14, 2011, Pages 4911-4919

  Hu, Ming Shien ^a   Kuo, Chun Chiang ^a   Wu, Chien Ting ^b   Chen, Chun Wei ^b   Ang, Priscilla Kailian ^c   Loh, Kian Ping ^c   Chen, Kuei Hsien ^a,b   Chen, Li Chyong ^b  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; COMPRESSIVE STRAIN; ELECTROCHEMICAL DEVICES; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GROWTH TECHNIQUES; LARGE-SCALE PRODUCTION; LAYER NUMBER; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; NANOWALLS; ON CHIPS; ONSET POTENTIAL; PH SENSITIVITY; POTENTIAL APPLICATIONS; SENSING APPLICATIONS; SI SUBSTRATES;

CATALYSIS; CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GRAPHENE; HETEROJUNCTIONS; METHANOL; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80051796590     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.07.013     Document Type: Article

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