Liquid-phase epitaxy of 2H-SiC film on a (0001) 4H-SiC substrate in Li-Si melt

Materials Letters

Volumn 63, Issue 8, 2009, Pages 649-651

  Imade, Mamoru ^a   Ogura, Takashi ^a   Uemura, Masahiro ^a   Kawamura, Fumio ^a   Yoshimura, Masashi ^a   Kitaoka, Yasuo ^a   Sasaki, Takatomo ^a   Mori, Yusuke ^a   Yamazaki, Masanobu ^b   Suwabe, Shigekazu ^b   Nakashima, Shin ichi ^c  

^a OSAKA UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

2H SiC; 4H SiC; Crystal growth; Epitaxial growth; HR TEM; Raman scattering

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; GROWTH (MATERIALS); MICROSCOPES; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDE; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

2H-SIC; 4H-SIC; HR-TEM; LATERAL PHOTON ELECTRON (LPE) TECHNIQUE; LIQUID PHASE EPITAXY (LPE); LIQUID-PHASE; POLYTYPE (CO); SEM MEASUREMENTS; SIC FILMS; SIC SUBSTRATES; TEM OBSERVATIONS; TRANSMISSION ELECTRON MICROSCOPE (TEM);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58649091727     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2008.12.009     Document Type: Article

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