Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 80-83

  Korotkov, R Y ^a   Reshchikov, M A ^a,b   Wessels, B W ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; IONIZATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033356075     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00411-1     Document Type: Article

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