Raman-scattering spectrum of GaN straight nanowires

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 3, 2000, Pages 345-346

  Li, J Y ^a,b   Chen, X L ^a   Cao, Y G ^a   Qiao, Z Y ^b   Lan, Y C ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEPOSITION; ELECTRON DIFFRACTION; LANTHANUM COMPOUNDS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; OPTICAL MICROSCOPY; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL);

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GALLIUM NITRIDE; NANOWIRES; SELECTED AREA ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034275793     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000602     Document Type: Article

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