Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Nano Research

Volumn 2, Issue 4, 2009, Pages 321-326

  He, Xiaoli ^a   Meng, Guowen ^a   Zhu, Xiaoguang ^a   Kong, Mingguang ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Chemical vapor deposition; GaN; LiAlO2; Photoluminescence; Triangular cross section; Vapor liquid solid

Indexed keywords

EID: 65349120050     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-009-9029-4     Document Type: Article

References (25)

1. Xia, Y.; Yang, P.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. One-dimensional nanostructures: Synthesis, characterization, and applications. Adv. Mater. 2003, 15, 353-389.
2. Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science 2001, 293, 1455-1457. (Pubitemid 32801542)
3. Law, M; Sirbuly, D. J.; Johnson, J. C.; Goldberger, J.; Saykally, R. J.; Yang, P. Nanoribbon waveguides for subwavelength photonics integration. Science 2004, 305, 1269-1273. (Pubitemid 39129227)
4. Johnson, J. C.; Choi, H. -J.; Knutsen, K. P.; Schaller, R. D.; Yang, P.; Saykally, R. J. Single gallium nitride nanowire lasers. Nat. Mater. 2002, 1, 106-110.
5. Huang, Y.; Duan, X.; Cui, Y.; Lieber, C. M. Gallium nitride nanowire nanodevices. Nano Lett. 2002, 2, 101-104. (Pubitemid 135706272)
6. Gradečak, S.; Qian, F.; Li, Y.; Park, H. -G.; Lieber, C. M. GaN nanowire lasers with low lasing thresholds. Appl. Phys. Lett. 2005, 87, 173111.
7. Pauzauskic, P. J.; Sirbuly, D. J.; Yang, P. Semiconductor nanowire ring resonator laser. Phys. Rev. Lett. 2006, 96, 143903.
8. Kim, H. M.; Kang, T. W.; Chung, K. S. Nanoscale ultraviolet-light emitting diodes using wide-bandgap gallium nitride nanorods. Adv. Mater. 2003, 15, 567-569.
9. Liu, B. D.; Bando, Y.; Tang, C. C.; Xu, F. F.; Golberg, D. Quasi-aligned single-crystalline GaN nanowire arrays. Appl. Phys. Lett. 2005, 87, 073106.
10. Cheng, G. S.; Chen, S. H.; Zhu, X. G.; Mao, Y. Q.; Zhang, L. D. Highly ordered nanostructures of single-crystalline GaN nanowires in anodic alumina membranes. Mater. Sci. Eng. A 2000, 286, 165-168.
11. Kuykendall, T.; Pauzauskie, P; Lee, S.; Zhang, Y.; Goldberger, J.; Yang, P. Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections. Nano Lett. 2003, 3, 1063-1066. (Pubitemid 37289296)
12. Kuykendall, T.; Pauzauskie, P. J.; Zhang, Y.; Goldberger, J.; Sirbuly, D.; Denlinger, J.; Yang, P. Crystallographic alignment of high-density gallium nitride nanowire arrays. Nat. Mater. 2004, 3, 524-528.
13. Wang, X.; Sun, X.; Fairchild, M.; Hersee, S. D. Fabrication of GaN nanowire arrays by confined epitaxy. Appl. Phys. Lett. 2006, 89, 233115
14. Kim, H. -M.; Kim, D. S.; Park, Y. S.; Kim, D. Y.; Kang, Chung, K. S. Growth of GaN nanorods by a hydride vapor phase epitaxy method. Adv. Mater. 2002, 14, 991-993.
15. Liu, B.; Yoshio, B.; Tang, C.; Xu, F.; Hu, J.; Dmitri, G. Needle-like bicrystalline GaN nanowires with excellent field emission properties. J. Phys. Chem. B 2005, 109, 17082-17085.
16. Meng, X. Q.; Shen, D. Z.; Zhang, J. Y.; Zhao, D. X.; Dong, L.; Lu, Y. M.; Liu, Y. C.; Fan, X. W. Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires. Nanotechnolgoy 2005, 16, 609-612.
17. Lai, W. H.; Hon, M. H.; Teoh, L. G.; Su, Y. H.; Shieh, J.; Chen, C. K. Field-emission performance of wormhole like mesoporous tungsten oxide nanowires. J. Electron. Mater. 2008, 37, 1082-1087.
18. Min, Z. G.; Roy, E.; Wen, L. H.; Min, L. W.; Min, H. S.; Zhang K. Y.; Quan, X. Z. Field emission from an array of free-standing metallic nanowires. Chin. Phys. Lett. 2002, 19, 1016-1018.
19. Simpkins, B. S.; Pehrsson, P. E.; Taheri, M. L.; Stroud, R. M. Diameter control of gallium nitride nanowires. J. Appl. Phys. 2007, 101, 094305.
20. Zhou, J.; Gong, L.; Deng, S. Z.; Chen, J.; She, J. C.; Xu, N. S.; Yang, R.; Wang, Z. L. Growth and field-emission property of tungsten oxide nanotip arrays. Appl. Phys. Lett. 2005, 87, 223108.
21. Chen, C. -H.; Huang, B. -R.; Lin, T. -S.; Chen, I. -C.; Hsu, C. -L. A new negative ion generator using ZnO nanowire array. J. Electrochem. Soc. 2006, 153, G894-G896. (Pubitemid 44343864)
22. Biswas, S.; Kar, S.; Ghoshal, T.; Ashok, V. D.; Chakrabarti, S.; Chaudhuri, S. Fabrication of GaN nanowires and nanoribbons by a catalyst assisted vapor liquid-solid-process. Mater. Res. Bull. 2007, 42, 428-436. (Pubitemid 46275795)
23. Chen, X.; Li, J.; Cao, Y.; Lan, Y.; Li, H.; He, M.; Wang, C.; Zhang, Z.; Qiao, Z. Straight and smooth GaN nanowires. Adv. Mater. 2000, 12, 1432-1434.
24. Colton, J. S.; Yu, P. Y.; Teo, K. L.; Perlin, P.; Weber, E. R.; Grzegory, I.; Uchida, K. Selective excitation of the yellow luminescence of GaN. Physica B 1999, 273-274, 75-79. (Pubitemid 30522319)
25. Jiang, D. -S.; Zhao, D. -G.; Yang, H. Optical analysis of dislocation-related physical processes in GaN-based epilayers. Phys. Status Solidi B 2007, 244, 2878-2891.