Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure

IEEE Photonics Technology Letters

Volumn 23, Issue 17, 2011, Pages 1240-1242

  Lin, Wen Yu ^a   Wuu, Dong Sing ^a   Huang, Shih Cheng ^a   Lo, Shih Yung ^a   Liu, Chien Min ^a   Horng, Ray Hua ^a,b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Fabry P rot; InGaN; light emitting diode (LED); oxide

Indexed keywords

ARRAY STRUCTURES; ELECTROLUMINESCENCE SPECTRUM; HIGH-DENSITY; INGAN; INJECTION CURRENTS; INTERFERENCE FRINGE; LIGHT EXTRACTION; LOW TEMPERATURES; MASK STRUCTURES; OUTPUT POWER; PEAK PROFILES; SCATTERING CENTERS;

DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 80051730635     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2158992     Document Type: Article

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