III-nitride-based light-emitting diodes with GaN micropillars around mesa and patterned substrate

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 140-144

  Peng, Li Chi ^a   Lai, Wei Chih ^a   Chang, Ming Nan ^a   Hsueh, Tao Hung ^a   Shei, Shih Chang ^b   Sheu, Jinn Kong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

GaN pillars; Patterned substrate; Textured sidewall

Indexed keywords

DECAY LENGTH; HIGH-POWER; III-NITRIDE; LIGHT EMISSION INTENSITY; LIGHT INTENSITY; MICRO-PILLARS; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SUBSTRATES; POWER ENHANCEMENT; RAY TRACING SIMULATION; WAVEGUIDE MODE;

GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PLANTS (BOTANY); SUBSTRATES;

GALLIUM ALLOYS;

EID: 73349099338     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034504     Document Type: Article

References (13)

1. T.Mukai, M. Yamada, and S. Nakamura, "Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys., vol. 38, no. 7A, pp. 3976-3981, Jul. 1999
2. T. Mukai, M. Yamada, and S. Nakamura, "Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green lightemitting diodes," Jpn. J. Appl. Phys., vol. 37, no. 11B, pp. 1358-1361, Nov. 1998
3. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol.84, no.6, pp. 855-857, Feb. 2004.
4. S. I. Na, G. Y. Ha, D. S. Han, S. S. Kim, J. Y. Kim, J. H. Lim, D. J. Kim, K. I. Min, and S. J. Park, "Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes," IEEE Photon. Technol. Lett., vol.18, no.14, pp. 1512-1514, Jul. 2006.
5. C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, and P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Trans. Electron Devices, vol.52, no.10, pp. 2346-2349, Oct. 2005.
6. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, and W. C. Lai, "InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface," Appl. Phys. Lett., vol.88, no.11, pp. 113 505-1-113 505-3, Mar. 2006.
7. C. M. Tsai, J. K. Sheu, C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, "Enhanced output power in GaNbased LEDs with naturally textured surfaced grown by MOCVD," IEEE Electron Device Lett., vol.26, no.7, pp. 464-466, Jul. 2005.
8. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett., vol.16, no.4, pp. 1002-1004, Apr. 2004.
9. C. H. Kuo, J. Chang, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, and J. M. Tsai, "Nitride-based near-ultraviolet LEDs with an ITO transparent contact," Mater. Sci. Eng. B, vol.106, no.1, pp. 69-72, Jan. 2004.
10. C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, and G. C. Chi, "Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer," IEEE Photon. Technol. Lett., vol.18, no.1, pp. 274-276, Jan. 2006.
11. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, "Nitride-based LEDs with textured side walls," IEEE Photon. Technol. Lett., vol.16, no.3, pp. 750-752, Mar. 2004.
12. R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Dohler, B. Dutta, and G. Borghs, "Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes," Appl. Phys. Lett., vol.74, no.16, pp. 2256-2258, Apr. 1999.
13. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang, and Y. Z. Chiou, "Nitride-based light emitting diodes with textured sidewalls and pillar waveguides," IEEE Photon. Technol. Lett., vol.18, no.23, pp. 2517-2519, Dec. 2006.