SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 8, 2009, Pages

InGaN/GaN light-emitting diodes with overcut-shaped periodic microstructures formed by wet etching process

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC PROPERTIES; ETCH RATES; INGAN/GAN; KOH SOLUTION; LED DEVICE; LIGHT EXTRACTION; PERIODIC MICROSTRUCTURE; WET-ETCHING PROCESS;

CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; MICROSTRUCTURE; MULTIPHOTON PROCESSES; SEMICONDUCTING GALLIUM; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 67649235959 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3141473 Document Type: Article

Times cited : (3)

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