Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step

IEEE Photonics Technology Letters

Volumn 21, Issue 6, 2009, Pages 371-373

  Kuo, Cheng Huang ^a   Fu, Y K ^a   Yeh, C L ^a   Tun, C J ^b   Chen, P H ^c   Lai, Wei Chih ^c   Chang, Shoou Jinn ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

InGaN GaN; Light emitting diode (LED); Low indium composition; Single quantum well (SQW)

Indexed keywords

GAN LIGHT-EMITTING DIODES; INDIUM CONTENT; INGAN-GAN; OUTPUT POWER; SINGLE QUANTUM WELL;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; PHASE SEPARATION; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 77955079193     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2012118     Document Type: Article

References (13)

1. T. Mukai, M. Yamada, and S. Nakamura, "Characteristics of InGaNbased UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys., vol. 38, no. 7A, pp. 3976-3981, Jul. 1999.
2. T. Mukai, M. Yamada, and S. Nakamura, "Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes," Jpn. J. Appl. Phys. Lett., vol. 37, no. 11B, pp. L1358-L1361, Dec. 1998.
3. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett., vol.69, no.27, pp. 4188-4190, Dec. 1996.
4. K. P. O'Donnell, R. W. Martin, and P. G. Middleton, "Origin of luminescence from InGaN diodes," Phys. Rev. Lett., vol.82, no.1, pp. 237-240, Jan. 1999.
5. A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara, "Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes," Appl. Phys. Lett., vol.79, no.22, pp. 3723-3725, Nov. 2001.
6. Z. C. Feng, W. Liu, S. J. Chua, J. W. Yu, C. C. Yang, T. R. Yang, and J. Zhao, "Photoluminescence characteristics of low indium composition InGaN thinfilms grown on sapphire by metalorganic chemical vapor deposition," Thin Solid Films, vol.498, pp. 118-122, 2006.
7. C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, and G. C. Chi, "Nitridebased light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures," Appl. Phys. Lett., vol.89, p. 19112, Nov. 2006.
8. S. J. Chang, C. H. Kuo, Y. K. Su, L. W.Wu, J. K. Sheu, T. C.Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400-nm InGaN-GaN and InGaNAlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol.8, no.4, pp. 744-748, Jul./Aug. 2002.
9. Y. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, J. M. Lee, Y. W. Ok, H. Kim, and S. J. Park, "Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots," Appl. Phys. Lett., vol.79, no.5, pp. 599-601, Jun. 2001.
10. x N alloys," Appl. Phys. Lett., vol.80, no.25, pp. 4741-4743, Jun. 2002.
11. Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ""S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells," Appl. Phys. Lett., vol.73, no.10, pp. 1370-1372, Sep. 1998.
12. D. I. Florescu, J. C. Ramer, D. S. Lee, and E. A. Armour, "InGaN/GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions," Appl. Phys. Lett., vol.84, no.25, pp. 5252-5254, Jun. 2004.
13. H. P. D. Schenk, M. Leroux, and P. de Mierry, "Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation," J. Appl. Phys., vol.88, no.3, pp. 1525-1534, Aug. 2000.