Improvement of the efficiency of InGaN-GaN quantum-well light-emitting diodes grown with a pulsed-trimethylindium flow process

IEEE Photonics Technology Letters

Volumn 21, Issue 7, 2009, Pages 414-416

  Hsueh, Tao Hung ^a   Sheu, Jinn Kong ^a   Lai, Wei Chi ^a   Wang, Yi Ting ^b   Kuo, Hao Chung ^b   Wang, Shing Chung ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

External quantum efficiency (EQE); GaN light emitting diode (LED); Multiple quantum well (MQW); Pulsed trimethylindium (pulsed TMIn)

Indexed keywords

CARRIER LOCALIZATION EFFECTS; EXTERNAL QUANTUM EFFICIENCY (EQE); FLOW PROCESS; GAN LIGHT-EMITTING DIODE (LED); INJECTION CURRENTS; LIGHT EMITTING DIODE LEDS; LIGHT OUTPUT POWER; METAL-ORGANIC VAPOR-PHASE EPITAXIES; MULTIPLE QUANTUM-WELL (MQW); OUTPUT POWER; PULSED-TRIMETHYLINDIUM (PULSED-TMIN); QUANTUM WELLS; RECOMBINATION EFFICIENCIES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCES;

ACTIVATION ENERGY; CRYSTAL GROWTH; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 64549130755     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2012872     Document Type: Article

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