Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 867-870

  Huang, S C ^a,b   Wuu, D S ^a   Wu, P Y ^b   Lin, W Y ^a   Tu, P M ^b   Yeh, Y C ^b   Hsu, C P ^b   Chan, S H ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b ADVANCED OPTOELECTRONIC TECHNOLOGY INC   (Taiwan)

Author keywords

A1. Surface; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT SOURCES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; VAPORS;

A1. SURFACE; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B3. LIGHT EMITTING DIODES; CORAL LIKES; ELECTROLUMINESCENCE INTENSITIES; ESCAPE PROBABILITIES; FLAT SURFACES; GAN LAYERS; LED STRUCTURES; LIGHT OUTPUT POWER; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; NOVEL SURFACES; OUTPUT POWER; TEXTURED SURFACES; ULTRA VIOLETS;

LIGHT EMITTING DIODES;

EID: 59749099525     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.104     Document Type: Article

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