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Volumn 14, Issue 10, 2011, Pages

Photocurrent enhancement in nanocrystalline-ZnO/Si heterojunction metal-semiconductor-metal photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE MULTIPLICATION; CURRENT TRANSPORT; DARK CURRENT RATIO; HETEROJUNCTION STRUCTURES; INTERDIGITATED STRUCTURE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; NANOCRYSTALLINES; PHOTOCURRENT ENHANCEMENT; RADIO-FREQUENCY SPUTTERING; RESPONSIVITY; SI SUBSTRATES; SPACE CHARGE LIMITED CURRENTS; SPECTRAL RESPONSE; ZNO; ZNO LAYERS; ZNO THIN FILM; ZNO/P-SI;

EID: 80051613960     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3614415     Document Type: Article
Times cited : (10)

References (22)
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  • 12
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    • (1999) Thin Solid Films , vol.354 , Issue.1 , pp. 227-231
    • Baik, D.G.1    Cho, S.M.2
  • 20
    • 44449125818 scopus 로고    scopus 로고
    • P-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism
    • DOI 10.1063/1.2937124
    • M. Dutta, D. Basak, Appl. Phys. Lett., 92, 212112, (2008). 10.1063/1.2937124 (Pubitemid 351770345)
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  • 21
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    • DOI 10.1063/1.2748333
    • R. Ghosh, D. Basak, Appl. Phys. Lett., 90, 243106 (2007). 10.1063/1.2748333 (Pubitemid 46934818)
    • (2007) Applied Physics Letters , vol.90 , Issue.24 , pp. 243106
    • Ghosh, R.1    Basak, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.